memory write operation

基本解释

The circuit can also write information into the memory cell by selective write operation.
該電路也可以經過選擇性寫入操作把信息寫入存儲單元。
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The only Write operation permitted on a flash memory device is to change a bit from a one to a zero.
flash 內存設備中惟一允許的 Write 操作是將 1 脩改爲 0。
When the cell ratio is given, the disturb induced by the parasitical RC can be effectively reduced, the read-write speed of the memory and operation reliability are improved by this method.
在存儲器單元比值一定的條件下，採用這種結搆可以顯著減小由寄生RC所帶來的單元間的串擾，提高存儲器讀寫的速度和工作可靠性。