SILC
基本解释
- 應力引起的泄漏電流
英汉例句
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments.
通過實騐研究了閃速存儲器存儲單元中應力誘生漏電流(ILC)産生機理. - The results show that compared with the pure oxide gate dielectrics of the same EOT,N/O stack gate dielectrics have much better performance on the aspects of tunneling leakage current,SILC characteristics,and gate dielectrics lifetime.
結果表明 ;同樣EOT的Si3 N4/SiO2 stack柵介質和純SiO2 柵介質比較 ;前者在柵隧穿漏電流、抗SILC性能、柵介質壽命等方麪都遠優於後者 . - stress induced leakage current(SILC)
應力誘生漏電流(SILC) - Effect of Neutral Traps on Tunneling Current and SILC in Ultrathin Oxide Layer
超薄氧化層中的中性陷阱對隧穿電流的影響和應變誘導漏電流