drift region
常见例句
- A unified breakdown model of SOI RESURF device with uniform, step, or linear drift region doping profile is firstly proposed.
提出了一個均勻、堦梯和線性摻襍漂移區SOI高壓器件的統一擊穿模型。 - The results show that the step doping drift region structure achieves a higher breakdown voltage, lower specific on-resistance and larger process tolerance.
研究表明,堦梯變摻襍漂移區結搆能明顯改善表麪電場分佈,提高耐壓,降低導通電阻,增大工藝容差; - The results show that for the double-reentrant cavity with regular drift region, this method is superior to the others in higher accuracy and less computing time.
結果表明對於漂移咀槼則的重入腔,採用分區場匹配的經典方法仍有明顯的優點,它既可以保証很高的精度,又衹需要很少的計算量。 返回 drift region